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| RF2155 3V PROGRAMMABLE GAIN POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Standard Batwing NC 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 G16 G8 RF OUT GND GND RF OUT NC NC Features Single 3V Supply 500mW CW Output Power 31dB Small Signal Gain Up to 60% Efficiency Digitally Controlled Output Power 430MHz to 930MHz Frequency Range VCC1 VCC2 GND GND GND1 RF IN PD Applications Analog Communication Systems 900MHz Spread Spectrum Systems 400MHz Industrial Radios Driver Stage for Higher Power Applications 3V Applications Functional Block Diagram Product Description The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz. The device is self-contained with the exception of the output matching network and power supply feed line. A two-bit digital control provides 4 levels of power control, in 8dB steps. Ordering Information RF2155 RF2155PCBA-41X 3V Programmable Gain Power Amplifier Fully Assembled Evaluation Board Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. Rev B9 DS080128 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 10 RF2155 Absolute Maximum Ratings Parameter Supply Voltage Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Rating -0.5 to +5.5 -0.5 to +3.3 500 +10 10:1 -30 to +85 -40 to +150 Unit VDC V mA dBm C C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Overall Frequency Range Maximum CW Output Power Small Signal Gain Second Harmonic Third Harmonic Fourth Harmonic Input VSWR CW Efficiency Output Load VSWR Min. Specification Typ. Max. Unit Condition T=25 C, VCC =3.6V, VPD =2.8V, ZLOAD =13, PIN =0dBm, Freq=915MHz 430 to 930 450 300 31 -30 -40 -36 2:1 50 6:1 2.7 0 2.2 0 0.8 +25.5 +15.0 +7.5 -2.5 2.8 0.5 3.7 2.5 0.3 1.0 +26.5 +18.5 +10.5 +1.5 3.0 0.8 5.0 3.0 0.5 1.6 +28.0 +21.0 +13.0 +4.0 100 56 MHz mW mW dB dBc dBc dBc All gain settings % G16="high", G8="high", PIN =0dBm Spurious<-60dBc V V mA V V mA dBm dBm dBm dBm ns Voltage supplied to the input Voltage supplied to the input Only in "ON" state Voltage supplied to the input Voltage supplied to the input Only in "ON" state G16="high", G8="high", PIN =0dBm G16="high", G8="low", PIN =0dBm G16="low", G8="high", PIN =0dBm G16="low", G8="low", PIN =0dBm Without external second harmonic trap VCC =3.6V VCC =3.0V Power Control Power Down "ON" Power Down "OFF" PD Input Current G16, G8 "ON" G16, G8 "OFF" G16, G8 Input Current Output Power Turn On/Off Time 2 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev B9 DS080128 RF2155 Parameter Power Supply Power Supply Voltage 3.0 Power Supply Current 225 90 37 25 20 50 1 3.6 5.0 300 115 55 35 110 10 V V mA mA mA mA mA A Specifications Operating limits G16="high", G8="high", PIN =0dBm G16="high", G8="low", PIN =0dBm G16="low", G8="high", PIN =0dBm G16="low", G8="low", PIN =0dBm G16="high", G8="high", No RF In G16="low", G8="low", PD="low" Min. Specification Typ. Max. Unit Condition Rev B9 DS080128 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 10 RF2155 Pin 1 2 Function NC VCC1 Description Not internally connected. Positive supply for the first stage (driver) amplifier. This is an unmatched transistor collector output. This pin should see an inductive path to AC ground (VCC with a UHF bypassing capacitor). This inductance can be achieved with a short, thin microstrip line (approximately equivalent to 0.4nH). At lower frequencies, the inductance value should be larger (longer microstrip line) and VCC should be bypassed with a larger bypass capacitor. This inductance forms a matching network with the amplifier stages, setting the amplifier's frequency of maximum gain. An additional 1F bypass capacitor in parallel with the UHF bypass capacitor is also recommended, but placement of this component is not as critical. A resistor of 39 from this pin to pin 3 is necessary to ensure stability under extreme output VSWR conditions. Positive supply for the bias circuits. This pin should be bypassed with a single UHF capacitor, placed as close as possible to the package. Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance. Same as pin 4. Ground return for the first stage; this should be connected to a via very close to the device. Amplifier RF input. This is a 50 RF input port to the amplifier. To improve the input match over all four gain control settings, an input inductor of 6.8nH should be added. The amplifier does not contain internal DC blocking and, therefore, should be externally DC blocked before connecting to any device which has DC present or which contains a DC path to ground. A series UHF capacitor is recommended for the DC blocking. Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum DC power. When this pin is at 3V the device will be in full power mode delivering maximum available gain and output power capability. This pin should not, in any circumstance, be higher than 3.3V. This pin should also have an external UHF and HF bypassing capacitor. Not internally connected. Not internally connected. Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. It is internally connected to pins 11 and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through one of these pins. Typically, pin 14 is used to supply bias. A transmission line of approximately 500mils length, followed by a bypass capacitor, is adequate. This pin can also be used to create a second harmonic trap. A UHF and large tantalum (1F) capacitor should be placed on the power supply side of the bias inductor. Pin 11 should be used for the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. Same as pin 4. Same as pin 4. Same as pin 11. RF output power gain control 8dB bit (see specification table for logic). The control voltage at this pin should never exceed 3.3V and a logic high should be at least 2.7V. This pin should also have an external UHF bypassing capacitor. VCC2 RF OUT VCC1 Interface Schematic RF IN From Bias Stages 3 4 5 6 7 VCC2 GND GND GND1 RF IN See pin 2. 8 PD PD To RF S tages 9 10 11 NC NC RF OUT F ro m B ia s S ta g e s 12 13 14 15 GND GND RF OUT G8 Gxx To RF Stages Pin Function Description Interface Schematic 4 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev B9 DS080128 RF2155 16 G16 RF output power gain control 16dB bit (see specification table for logic). Same as pin 15. The control voltage at this pin should never exceed 3.3V and a logic high should be at least 2.7V. This pin should also have an external UHF bypassing capacitor. Package Drawing -A0.158 0.150 0.021 0.014 0.009 0.004 0.392 0.386 0.069 0.064 0.050 0.244 0.230 8 MAX 0 MIN 0.010 0.008 0.060 0.054 0.035 0.016 Rev B9 DS080128 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 10 RF2155 Application Schematic 915 MHz VCC 1 W=20, L=180 mil 33 pF 2 39 3 Board Material: FR-4 (Er=4.7) h=30 mil Impedances are critical at pin 2, 7, 11, and 14 33 pF 6.8 nH RF In Power Down 33 pF 7 8 10 9 33 pF 4 5 6 14 33 pF 13 12 W=55, L=330 mil 11 3.9 pF 50 33 pF RF Out 15 W=20, L=570 mil VCC 8 dB Ctrl 16 33 pF 33 pF 16 dB Ctrl Evaluation Board Schematic P1 P1-1 1 2 P1-3 3 VB2 GND PD P2-3 P2-1 P2 1 2 3 VCC GND VB1 2155400 Rev - C14 1 F 1 2 R1 39 C4 33 pF 3 4 5 16 15 14 13 12 11 10 9 C10 3.9 pF C2 33 pF C12 1 nF L=570 mil, W=20 mil C7 33 pF C8 33 pF P2-3 P2-1 C13 1 F C6 1 nF C5 33 pF P1-1 L=330 mil, W=55 mil C2 33 pF 50 strip RF IN J1 P1-3 50 strip C1 33 pF L1 6.8 nH 6 7 8 RF OUT J2 C9 1 nF C3 33 pF 6 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev B9 DS080128 RF2155 Evaluation Board Layout Board Size 2.0" x 2.0" Rev B9 DS080128 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 10 RF2155 Pout and Icc vs. Pin, State 11 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) 30 Pout 25 Icc 250 20 Icc 15 200 300 25 Pout 250 Pout and Icc vs. Pin, State 10 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) 300 Pout (dBm) Pout (dBm) 20 200 Icc (mA) 10 150 15 150 5 100 10 100 0 50 5 -20 -15 -10 -5 0 5 10 50 -5 -20 -15 -10 -5 0 5 10 0 Pin (dBm) Pin (dBm) Pout and Icc vs. Pin, State 01 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) 20 Pout 15 Icc 10 200 0 250 5 300 10 Pout and Icc vs. Pin, State 01 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) 300 Pout 250 Icc 200 Pout (dBm) Pout (dBm) Icc (mA) 5 150 -5 150 0 100 -10 100 -5 50 -15 50 -10 -20 -15 -10 -5 0 5 10 0 -20 -20 -15 -10 -5 0 5 10 0 Pin (dBm) Pin (dBm) Pout and Efficiency vs. Vcc, Full Gain (915 MHz, Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) 30 Pout Efficiency 29 57.0 20 25 60.0 30 Pout vs. Temperature, All Gain Settings (Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) Bit1=1;Bit2=1 Bit1=1;Bit2=0 Pout (dBm) Pout (dBm) 28 54.0 Efficiency (%) 15 27 51.0 10 Bit1=0;Bit2=1 5 26 48.0 0 Bit1=0;Bit2=0 25 3.0 3.5 4.0 4.5 5.0 5.5 45.0 -5 -25 -5 15 35 55 75 95 Vcc (Volts) Temperature (C) 8 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev B9 DS080128 Icc (mA) Icc (mA) RF2155 Pout vs. Frequency, All Gain Settings (Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) 30 Bit1=1;Bit2=1 25 200 20 Bit1=1;Bit2=0 150 Bit1=1;Bit2=1 250 Icc vs. Frequency, All Gain Settings (Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) Pout (dBm) 10 Bit1=0;Bit2=1 Icc (mA) 15 100 Bit1=1;Bit2=0 5 Bit1=0;Bit2=0 0 Bit1=0;Bit2=0 -5 870 880 890 900 910 920 930 940 950 960 0 870 880 890 900 910 920 930 940 950 960 50 Bit1=0;Bit2=1 Frequency (MHz) Frequency (MHz) RoHS* Banned M aterial Content RoHS Compliant: Pac kage total w eight in grams (g): Complianc e Date Code: Bill of Materials Rev is ion: Pb Free Category : Bill of M ate r ials Die M olding Com pound Le ad Fr am e Die Attach Epoxy Wir e Solde r Plating Y es 0.139 0631 e3 Par ts Pe r M illion (PPM ) Hg Cr V I 0 0 0 0 0 0 0 0 0 0 0 0 Pb 0 0 0 0 0 0 Cd 0 0 0 0 0 0 PBB 0 0 0 0 0 0 PBDE 0 0 0 0 0 0 T his RoHS bann e d m ate r ial conte nt de clar ation w as pr e par e d s ole ly on infor m ation, including analytical data, pr ovide d to RFM D by its s upplie r s , and applie s to the Bill of M ate r ials (BOM ) r e vis ion note d above . * DIRECTIV E 2002/95/EC OF THE EUROPEA N PA RLIA MENT A ND OF THE COUNCIL of 27 January 2003 on the res tric tion of the us e of c ertain haz ardous s ubs tanc es in elec tric al and elec tronic equipment Rev B9 DS080128 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 9 of 10 RF2155 10 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev B9 DS080128 |
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